Samsung 860 Evo Solid State Drive 500gb SATA 2.5

₱3,845.00

₱4,495.00

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Samsung 860 Evo Solid State Drive 500gb SATA 2.5 with FREE Samsung Evo Plus 64gb MicroSD

Product Specifications

  • Series: SSD 860 EVO
  • Usage Application: Client PCs
  • Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface Storage
  • Capacity: 500 GB (1 GB=1 Billion byte by IDEMA)
  • Key Features:
  • Sequential Read Speed: Up to 550 MB/s Sequential Read
  • Sequential Write Speed: Up to 520 MB/s Sequential Write
  • Random Read (4KB, QD32): Up to 98,000 IOPS Random Read Random Read (4KB, QD1): Up to 10,000 IOPS Random
  • Random Write (4KB, QD32): Up to 90,000 IOPS Random Write Random Write (4KB, QD1): Up to 42,000 IOPS Random Write
  • Samsung MJX Controller: NAND Flash, Samsung V-NAND 3bit MLC
  • NAND Type: Samsung V-NAND 3bit MLC
  • Cache Memory: Samsung 512 MB Low Power DDR4 SDRAM
  • Trim Support: TRIM Supported
  • AES Encryption: AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
  • S.M.A.R.T. Support: S.M.A.R.T Supported
  • GC (Garbage Collection): Auto Garbage Collection Algorithm
  • WWN Support: World Wide Name supported
  • Device Sleep Mode Support: Yes
  • Internal Storage: Yes
  • Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
  • Operating Temperature: 0 - 70? Operating Temperature

 

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Samsung 860 Evo Solid State Drive 500gb SATA 2.5 with FREE Samsung Evo Plus 64gb MicroSD

Product Specifications

  • Series: SSD 860 EVO
  • Usage Application: Client PCs
  • Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface Storage
  • Capacity: 500 GB (1 GB=1 Billion byte by IDEMA)
  • Key Features:
  • Sequential Read Speed: Up to 550 MB/s Sequential Read
  • Sequential Write Speed: Up to 520 MB/s Sequential Write
  • Random Read (4KB, QD32): Up to 98,000 IOPS Random Read Random Read (4KB, QD1): Up to 10,000 IOPS Random
  • Random Write (4KB, QD32): Up to 90,000 IOPS Random Write Random Write (4KB, QD1): Up to 42,000 IOPS Random Write
  • Samsung MJX Controller: NAND Flash, Samsung V-NAND 3bit MLC
  • NAND Type: Samsung V-NAND 3bit MLC
  • Cache Memory: Samsung 512 MB Low Power DDR4 SDRAM
  • Trim Support: TRIM Supported
  • AES Encryption: AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
  • S.M.A.R.T. Support: S.M.A.R.T Supported
  • GC (Garbage Collection): Auto Garbage Collection Algorithm
  • WWN Support: World Wide Name supported
  • Device Sleep Mode Support: Yes
  • Internal Storage: Yes
  • Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
  • Operating Temperature: 0 - 70? Operating Temperature